SCOPUS 정보 검색 플랫폼

Volumn 48, Issue 1, 1999, Pages 283-286

Characteristics of tantalum pentoxide dielectric films deposited on silicon by excimer-lamp assisted photo-induced CVD using an injection liquid source

(11) Mooney, M B a Hurley, P K a O'Sullivan, B J a Beechinor, J T a Zhang, J Y b Boyd, I W b Kelly, P V a Senateur J P c Crean, G M a Jimenez, C c Paillous, M c

a UNIVERSITY COLLEGE CORK (Ireland)

b UNIVERSITY COLLEGE LONDON (United Kingdom)

c GRENOBLE INSTITUTE OF TECHNOLOGY (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; EXCIMER LASERS; IMPURITIES; LEAKAGE CURRENTS; PERMITTIVITY; POROSITY; SEMICONDUCTING SILICON; TANTALUM COMPOUNDS;

EXCIMER-LAMP ASSISTED PHOTO-INDUCED CHEMICAL VAPOR DEPOSITION; ULTRAVIOLET-ASSISTED INJECTION LIQUID SOURCES (UVILS);

DIELECTRIC FILMS;

EID: 0033190233 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(99)00389-5 Document Type: Article

Times cited : (5)

References (14)

1
- 84940826989
- (J.L. Vossen and W. Kern eds.) Academic Press, New York
- K.F. Jensen and W. Kern., Ch IV-1 in Thin Film Processes II, (J.L. Vossen and W. Kern eds.) Academic Press, New York (1991) 283
- (1991) Ch IV-1 in Thin Film Processes , vol.2 , pp. 283
- Jensen, K.F.¹ Kern, W.²

2
- 0027609883
- S.Kamiyama, P.Lesaicherre, H.Suzuki, A.Sakai, I.Nishiyama and A.Ishitani, J. Electrochem Soc. 140 (1993) 1617
- (1993) J. Electrochem Soc. , vol.140 , pp. 1617
- Kamiyama, S.¹ Lesaicherre, P.² Suzuki, H.³ Sakai, A.⁴ Nishiyama, I.⁵ Ishitani, A.⁶

3
- 4243674188
- S.C.Sun and T.F.Chen, Proc. of IEDM, p.687 (1996)
- (1996) Proc. of IEDM , pp. 687
- Sun, S.C.¹ Chen, T.F.²

4
- 0028484276
- L.K.Han, G.W.Yoon, D.L.Kwong, V.K.Mathews, and P.C.Fazan, IEEE Elec. Device Lett., 15, p. 280 (1994).
- (1994) IEEE Elec. Device Lett. , vol.15 , pp. 280
- Han, L.K.¹ Yoon, G.W.² Kwong, D.L.³ Mathews, V.K.⁴ Fazan, P.C.⁵

5
- 0008571319
- R.A.B. Devine, C.Chaneliere, J.L.Autran, B.Balland, P.Paillet and J.L.Leray, Proc. of INFOS, p.61 (1997).
- (1997) Proc. of INFOS , pp. 61
- Devine, R.A.B.¹ Chaneliere, C.² Autran, J.L.³ Balland, B.⁴ Paillet, P.⁵ Leray, J.L.⁶

6
- 0000102577
- R.A.B.Devine, L.Vallier, J.L.Autran, P.Paillet and J.L.Leray, Appl. Phys. Lett. 68 (1996) 1775
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1775
- Devine, R.A.B.¹ Vallier, L.² Autran, J.L.³ Paillet, P.⁴ Leray, J.L.⁵

7
- 0025446612
- W.H. Lan, S.T. Tu, S.J. Yang and K.F. Huang, Jpn. J. Appl. Phys. 29 (1990) 997.
- (1990) Jpn. J. Appl. Phys. , vol.29 , pp. 997
- Lan, W.H.¹ Tu, S.T.² Yang, S.J.³ Huang, K.F.⁴

8
- 0000635942
- F. Rochet, G. Dufour, H. Roulet, B. Pelloie and M. Froment, Phys. Rev. B37 (1988) 6468.
- (1988) Phys. Rev. , vol.B37 , pp. 6468
- Rochet, F.¹ Dufour, G.² Roulet, H.³ Pelloie, B.⁴ Froment, M.⁵

9
- 0031654378
- J.-Y. Zhang, L.-J. Bie and I.W. Boyd, Jpn. J. Appl. Phys. 37 (1998) L27-L29
- (1998) Jpn. J. Appl. Phys. , vol.37
- Zhang, J.-Y.¹ Bie, L.-J.² Boyd, I.W.³

10
- 0031094439
- F. Felten, J.P. Senateur, M. Labeau, K. Yu-Zhang and A. Abrutis, Thin Solid Films 296 (1997) 79-81
- (1997) Thin Solid Films , vol.296 , pp. 79-81
- Felten, F.¹ Senateur, J.P.² Labeau, M.³ Yu-Zhang, K.⁴ Abrutis, A.⁵

11
- 84938019913
- June
- W. Kern, RCA Review (June 1970) 187-206
- (1970) RCA Review , pp. 187-206
- Kern, W.¹

12
- 0032202781
- I.C. Kizilyalli, R.Y.S. Huang and P.K. Roy, IEEE Electron Device Letters 19, 423-5 (1998)
- (1998) IEEE Electron Device Letters , vol.19 , pp. 423-425
- Kizilyalli, I.C.¹ Huang, R.Y.S.² Roy, P.K.³

13
- 0009260463
- A.R. Forouhi and I. Bloomer, Phys. Rev. B34, 7018, (1986)
- (1986) Phys. Rev. , vol.B34 , pp. 7018
- Forouhi, A.R.¹ Bloomer, I.²

14
- 0026461497
- G.E. Jellison Jr., Optical Materials 1, 41-47 (1992)
- (1992) Optical Materials , vol.1 , pp. 41-47
- Jellison G.E., Jr.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.