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Journal of Luminescence

Volumn 85, Issue 4, 2000, Pages 247-260

Behavior of nitrogen impurities in III-V semiconductors

(2) Zhang, Yong a Ge, Weikun b

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

Author keywords

Bound exciton; Electron phonon interaction; GaAs : N; GaP : N; Isoelectric impurity

Indexed keywords

BINDING ENERGY; EXCITONS; IMPURITIES; LATTICE VIBRATIONS; LIGHT POLARIZATION; NITROGEN; PHONONS; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE;

LATTICE RELAXATION; SEMICONDUCTING GALLIUM PHOSPHIDE; STRAIN FIELDS;

LUMINESCENCE;

EID: 0033896046 PISSN: 00222313 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-2313(99)00193-3 Document Type: Article

Times cited : (41)

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