Pit nucleation in the presence of three-dimensional islands during heteroepitaxial growth

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 23, 2004, Pages 1-9

  Bouville, Mathieu ^a,b   Millunchick, Joanna Mirecki ^a   Falk, Michael L ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ATOM; DENSITY GRADIENT; ELASTICITY; ENERGY; ENERGY TRANSFER; FILM; GROWTH CURVE; KINETICS; MATHEMATICAL COMPUTING; MOLECULAR DYNAMICS; MOLECULAR SIZE; MORPHOLOGICAL ADAPTATION; SEMICONDUCTOR; STRESS STRAIN RELATIONSHIP; SURFACE PROPERTY; TEMPERATURE DEPENDENCE; THEORETICAL MODEL; THERMODYNAMICS;

EID: 13944269077     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.235312     Document Type: Article

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