Adatom concentration on GaAs(0 0 1) during annealing

Journal of Crystal Growth

Volumn 174, Issue 1-4, 1997, Pages 572-578

  Johnson, M D ^a,b   Leung, K T ^a   Birch, A ^a   Orr, B G ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Adatom; GasAs; MBE; Surface dynamics

Indexed keywords

ANNEALING; ATOMS; COMPUTER SIMULATION; COOLING; MOLECULAR BEAM EPITAXY; MONOLAYERS; MONTE CARLO METHODS; SCANNING TUNNELING MICROSCOPY; SURFACE STRUCTURE;

ADATOM CONCENTRATION; SURFACE DYNAMICS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031547436     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00039-0     Document Type: Article

References (25)

1. Local equilibrium and simply equilibrium will refer to a condition where adatoms are in a steady state with their nearest steps.
2. M.D. Pashley, K.W. Haberern, W. Friday, J.M. Woodall and P.D. Kirchner, Phys. Rev. Lett. 60 (1988) 2176; M.D. Pashley, K.W. Haberern and J.M. Gaines, Appl. Phys. Lett. 58 (1991) 406.
3. M.D. Pashley, K.W. Haberern, W. Friday, J.M. Woodall and P.D. Kirchner, Phys. Rev. Lett. 60 (1988) 2176; M.D. Pashley, K.W. Haberern and J.M. Gaines, Appl. Phys. Lett. 58 (1991) 406.
4. D.K. Biegelsen, R.D. Bringans, J.E. Northrup and L.-E. Swartz, Phys. Rev. B 41 (1990) 5701.
5. E.J. Heller, Z.Y. Zhang and M.G. Lagaily, Phys. Rev. Lett. 71 (1993) 743.
6. T. Ide, A. Yamashita and T. Mizutani, Surf. Sci. 287 (1993) 1013.
7. S. Clarke and D.D. Vvedensky, Phys. Rev. Lett. 58 (1987) 2235.
8. P. Smilauer, M.R. Wilby and D.D. Vvedensky, Phys. Rev. B 47 (1993) 4119, 17603.
9. T. Shitara, D.D. Vvedensky, M.R. Wilby, J. Zhang, J.H. Neave and B.A. Joyce, Phys. Rev. B 46 (1992) 6815, 6825.
10. M.D. Johnson, C. Orme, A.W. Hunt, D. Graff, J. Sudifono, L.M. Sander and B.G. Orr, Phys. Rev. Lett. 72 (1994) 116.
11. W.K. Burton, N. Cabrera and F.C. Frank, Proc. Roy. Soc. London Ser. A 243 (1951) 299.
12. V. Thierry-Mieg, F. Laruelle and B. Etienne, J. Crystal Growth 127 (1993) 1022; C. Pupp, J.J. Murray and R.F. Pottie, J. Chem. Therm. 6 (1974) 123.
13. V. Thierry-Mieg, F. Laruelle and B. Etienne, J. Crystal Growth 127 (1993) 1022; C. Pupp, J.J. Murray and R.F. Pottie, J. Chem. Therm. 6 (1974) 123.
14. C.T. Foxon and B.A. Joyce, Surf. Sci. 50 (1975) 434; J.R. Arthur, Surf. Sci. 43 (1974) 449.
15. C.T. Foxon and B.A. Joyce, Surf. Sci. 50 (1975) 434; J.R. Arthur, Surf. Sci. 43 (1974) 449.
16. G.W. Smith, A.J. Pidduck, C.R. Whitehouse, J.L. Glasper, A.M. Keir and C. Pickering, Appl. Phys. Lett. 59 (1991) 3282.
17. C. Orme, M.D. Johnson, J. Sudijono, K.T. Leung and B.G. Orr, Appl. Phys. Lett. 64 (1994) 860; C. Orme, M.D. Johnson, K.T. Leung and B.G. Orr, in: Compound Semiconductor Epitaxy, Eds. C.W. Tu, L.A. Kolodziejski and V.R. McCray (Materials Research Society, Pittsburgh, 1994).
18. C. Orme, M.D. Johnson, J. Sudijono, K.T. Leung and B.G. Orr, Appl. Phys. Lett. 64 (1994) 860; C. Orme, M.D. Johnson, K.T. Leung and B.G. Orr, in: Compound Semiconductor Epitaxy, Eds. C.W. Tu, L.A. Kolodziejski and V.R. McCray (Materials Research Society, Pittsburgh, 1994).
19. A.J. Pidduck, G.W. Smith, A.M. Keir and C.R. Whitehouse, in: Mechanisms of Thin Film Evolution, Eds. S.M. Yalisove, C.V. Thompson and D.J. Eaglesham (Materials Research Society, Pittsburgh, 1994).
20. B.G. Orr, C.W. Snyder and M. Johnson, Rev. Sci. Instrum. 62 (1991) 1400.
21. Y.-N. Yang and E.D. Williams, Phys. Rev. Lett. 72 (1994) 1862.
22. B.S. Swartzentruber, Y.-W. Mo, R. Kariotis and M.G. Lagally, Phys. Rev. Lett. 65 (1990) 1913.
23. D.D. Vvedensky and S. Clarke, Surf. Sci. 225 (1990) 373.
24. C.W. Snyder, J. Sudijono, Chi-Hang Lam, M.D. Johnson and B.G. Orr, Phys. Rev. B 50 (1994) 18194.
25. J. Tersoff, M.D. Johnson and B.G. Orr, Phys. Rev. Lett. 78 (1997) 282.