Elastic relaxation phenomena in compressive Ga0.2In0.8As grown on (0 0 1) and (1 1 3)B InP at low lattice mismatch

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 252-255

  Lacombe, D ^a   Ponchet, A ^a   Frechengues S ^b   Drouot, V ^b   Bertru, N ^b   Lambert, B ^b   Le Corre, A ^c  

^a CEMES CNRS   (France)

^b INSA DE RENNES   (France)

^c ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; ELASTICITY; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

ELASTIC RELAXATION; LATTICE MISMATCH;

SEMICONDUCTOR GROWTH;

EID: 0032676474     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01332-3     Document Type: Article

References (10)

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