Growth of quantum fortress structures in Si 1 - xGe x/Si via combinatorial deposition

Applied Physics Letters

Volumn 83, Issue 25, 2003, Pages 5205-5207

  Vandervelde, Thomas E ^a   Kumar, Piyush ^a   Kobayashi, Takeshi ^a   Gray, Jennifer L ^a   Pernell, Tim ^a   Floro, Jerrold A ^b   Hull, Robert ^a   Bean, John C ^a  

^a University of Virginia   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; LATTICE RELAXATION; STRAIN ENERGY;

ATOMIC FORCE MICROSCOPY; COMPOSITION; DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTOR QUANTUM DOTS; SILICON WAFERS; STRAIN; SUBSTRATES;

FILM GROWTH;

EID: 0942288606     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1636268     Document Type: Article

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