The phosphorous level fine structure in homoepitaxial and polycrystalline n-type CVD diamond

Diamond and Related Materials

Volumn 13, Issue 11-12, 2004, Pages 2041-2045

  Haenen, K ^a,b   Nesladek M ^a,c   De Schepper, L ^a,c   Kravets, R ^d   Vanecek M ^d   Koizumi, S ^b  

^a HASSELT UNIVERSITY   (Belgium)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c HASSELT UNIVERSITY   (Belgium)

^d INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Electronic structure; N type doping; Opto electronic characterisation; Phosphorous

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMOND FILMS; ELECTRONIC STRUCTURE; NITROGEN; OPTOELECTRONIC DEVICES; PHOSPHORUS; PHOTOCURRENTS; POLYCRYSTALLINE MATERIALS; SPECTROSCOPIC ANALYSIS;

N-TYPE DOPING; OPTO-ELECTRONIC CHARACTERIZATION; PHOTOTHERMAL IONIZATION SPECTROSCOPY (PTIS);

DIAMONDS;

EID: 7544238033     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.06.016     Document Type: Conference Paper

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