Homoepitaxial growth and characterization of phosphorus-doped diamond using tertiarybutylphosphine as a doping source

Diamond and Related Materials

Volumn 13, Issue 11-12, 2004, Pages 2117-2120

  Kato, H ^a,b   Futako, W ^a,b   Yamasaki, S ^a,b   Okushi, H ^a,b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Chemical vapor deposition; Homoepitaxial growth; N type; Phosphorus doped; Tertiarybutylphosphine

Indexed keywords

CATHODOLUMINESCENCE; CHARACTERIZATION; DIAMOND FILMS; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; EXCITONS; PHOSPHORUS; SUBSTITUTION REACTIONS;

HOMOEPITAXIAL GROWTH; PHOSPHORUS-DOPED DIAMONDS;

DIAMONDS;

EID: 7544229430     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.07.010     Document Type: Conference Paper

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