Direct growth of CdTe(1 0 0) epilayers on Si(1 0 0) substrate by hot wall epitaxy

Applied Surface Science

Volumn 242, Issue 3-4, 2005, Pages 295-303

  Lalev, Georgi M ^a   Wang, Jifeng ^a   Lim, Jae Won ^a   Abe, Seishi ^b   Masumoto, Katashi ^b   Isshiki, Minoru ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Research Institute of Electric and Magnetic Alloys Sendai   (Japan)

Author keywords

Hot wall epitaxy; Semiconducting II VI materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; CADMIUM COMPOUNDS; CRYSTAL ORIENTATION; CRYSTALLINE MATERIALS; GRAIN BOUNDARIES; HETEROJUNCTIONS; NUCLEATION; PREHEATING; SEMICONDUCTING SILICON; THERMAL EXPANSION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITIES; EPILAYERS; HOT WALL EPITAXY (HWE); SEMICONDUCTING II-VI MATERIALS;

EPITAXIAL GROWTH;

EID: 13444304241     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.08.024     Document Type: Article

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