Photoemission studies of the interactions of CdTe and Te with Si(100)

Surface Science

Volumn 360, Issue 1-3, 1996, Pages 187-199

  Bennett, M R ^a,b,c   Cafolla, A A ^a,c   Cairns, J W ^a,d   Dunscombe, C J ^a   Williams, R H ^a,e  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c DUBLIN CITY UNIVERSITY   (Ireland)

^d DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

^e SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

Cadmium telluride; Low energy electron diffraction; Low index single crystal surfaces; Semiconductor semiconductor interfaces; Silicon; Soft X ray photoelectron spectroscopy; Surface chemical reaction; Tellurium

Indexed keywords

CRYSTAL ORIENTATION; FERMI LEVEL; INTERFACES (MATERIALS); LOW ENERGY ELECTRON DIFFRACTION; PHOTOEMISSION; SEMICONDUCTING SILICON; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SURFACE STRUCTURE; THERMAL EFFECTS; X RAY PHOTOELECTRON SPECTROSCOPY;

LOW INDEX SINGLE CRYSTAL SURFACES; SEMICONDUCTOR SEMICONDUCTOR INTERFACES; SOFT X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0030196005     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00645-0     Document Type: Article

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