Heteroepitaxial CdTe(111) grown by MBE on nominally flat and misoriented Si(001) substrates: Characterization by electron microscopy and optical methods

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 58-63

  Tsen, S C Y ^a   Smith, David J ^a   Hutchins, J W ^b   Skromme, B J ^b   Chen, Y P ^c   Sivananthan, S ^c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Arizona State University   (United States)

^c UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CRYSTAL DEFECTS; ELECTRON TRANSITIONS; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SILICON; SUBSTRATES; THERMAL EXPANSION; TRANSMISSION ELECTRON MICROSCOPY; TWINNING;

BIAXIAL TENSILE STRAIN; HETEROEPITAXIAL GROWTH; LOW TEMPERATURE REFLECTANCE; OPTICAL METHODS;

EPITAXIAL GROWTH;

EID: 0030562216     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00823-3     Document Type: Article

References (22)

1. R. Sporken, Y.P. Chen, S. Sivananthan, M.D. Lange and J.P. Faune, J. Vac. Sci. Technol. B 10 (1992) 1405.
2. Y.P. Chen, S. Sivananthan and J.-P. Faune, J. Electron. Mater. 22 (1994) 951.
3. Y.P. Chen, PhD Thesis, University of Illinois at Chicago (1995).
4. Y.P. Chen, J.P. Faune and S. Sivananthan, J. Electron. Mater. 24 (1995) 475.
5. D.J. Smith, S.-C.Y. Tsen, Y.P. Chen, J.-P. Faurie and S. Sivananthan, Appl. Phys. Lett. 67 (1995) 1591.
6. C.-H. Chang, PhD Thesis, Arizona State University (1989).
7. C. Bravman and R. Sinclair, J. Electron Microsc. Technol. 1 (1984) 53.
8. CERIUS is developed by Cambridge Molecular Design, Cowley Rd., Cambridge, UK.
9. D.J. Smith, R.W. Glaisher and P. Lu, Phil. Mag. Lett. 59 (1989) 69.
10. H. Hartmann, in: Current Topics in Materials Science, Vol. 9, Ed. E. Kaldis (1982) p. 25.
11. R. Korenstein, P. Madison and P. Hallock, J. Vac. Sci. Technol. B 10 (1992) 1370.
12. J.M. Francou, K. Saminadayar, J.L. Pautrat, J.P. Gaillard, A. Million and C. Fontaine, J. Crystal Growth 72 (1985) 220.
13. H. Tatsuoka, H. Kuwabara, Y. Nakanishi and H. Fujiyasu, J. Crystal Growth 129 (1993) 686.
14. W.H. Kleiner and L.M. Roth, Phys. Rev. Lett. 2 (1959) 334; our deformation potentials are quoted in the notation of G.E. Pikus and G.L. Bir, Sov. Phys. Solid State 1 (1959) 136.
15. W.H. Kleiner and L.M. Roth, Phys. Rev. Lett. 2 (1959) 334; our deformation potentials are quoted in the notation of G.E. Pikus and G.L. Bir, Sov. Phys. Solid State 1 (1959) 136.
16. M.S. Boley, R.J. Thomas, M. Chandrasekhar, H.R. Chandrasekhar, A.K. Ramdas, M. Kobayashi and R.L. Gunshor, J. Appl. Phys. 74 (1993) 4136.
17. M. Prakesh, M. Chandrasekhar, H.R. Chandrasekhar, I. Miotkowski and A.K. Ramdas, Phys. Rev. B 42 (1990) 3586.
18. Yu.Kh. Vekilov and A.P. Rusakov, Sov. Phys. Solid State 13 (1971) 956.
19. Y.S. Touloukian, R.E. Taylor and T.Y.R. Lee, in: Thermal Expansion - Non-Metallic Solids, Vol. 13 (Plenum, New York, 1970) p. 154.
20. M.G. Williams, R.D. Tomlinson and M.J. Hampshire, Solid State Commun. 7 (1969) 1831.
21. J.S. Browder and S.S. Ballard, Appl. Opt. 11 (1972) 2087.
22. T.F. Smith and G.K. White, J. Phys. C 8 (1975) 2031.