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Journal of Crystal Growth

Volumn 167, Issue 3-4, 1996, Pages 488-494

CdTe(111)B/Si(100) structure grown by metalorganic vapor phase epitaxy with Te adsorption and annealing

(2) Nishino, Hironori a Nishijima, Yoshito a

a FUJITSU LABORATORIES LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; ANNEALING; ATOMS; CRYSTAL STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; NUCLEATION; PHASE INTERFACES; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SILICON; TELLURIUM; THERMAL EFFECTS; TWINNING;

ANTIPHASE; CADMIUM TELLURIDE; EPILAYERS; MISORIENTATION ANGLE; NAGAI MODEL; TILT;

EPITAXIAL GROWTH;

EID: 0030259528 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00288-6 Document Type: Article

Times cited : (15)

References (12)

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