Twin suppression in HWE grown CdTe epilayers on Si(111) by novel two-step growth procedure

Materials Letters

Volumn 58, Issue 10, 2004, Pages 1607-1610

  Lalev, Georgi M ^a   Wang, Jifeng ^a   Abe, Seishi ^b   Masumoto, Katashi ^b   Isshiki, Minoru ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b Research Institute of Electric and Magnetic Alloys Sendai   (Japan)

Author keywords

Epitaxial growth; Semiconductors; X ray techniques

Indexed keywords

CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; FLUXES; INFRARED DETECTORS; NUCLEATION; QUALITY CONTROL; REDUCTION; SINGLE CRYSTALS; X RAY DIFFRACTION;

CRYSTAL QUALITY; EPILAYERS; HOT WALL EPITAXY;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 1242265463     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2003.10.034     Document Type: Article

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