Ga-doping for β-FeSi2 films prepared by molecular beam epitaxy

Optical Materials

Volumn 27, Issue 5, 2005, Pages 935-941

  Fukuzawa, Yasuhiro ^a   Kuroda, Ryo ^b   Liu, Zhengxin ^c   Osamura, Masato ^c   Ootsuka, Teruhisa ^c   Otogawa, Naotaka ^a   Nakayama, Yasuhiko ^a   Tanoue, Hisao ^a   Makita, Yunosuke ^a,d  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b NIPPON INSTITUTE OF TECHNOLOGY   (Japan)

^c System Engineers' Co Ltd   (Japan)

^d Tateyama Kagaku Ind Co Ltd   (Japan)

Author keywords

Ga doped FeSi2; Hall effect measurements; Hall mobility; MBE growth; MEE growth; Net hole concentration; p type conductivity; SL structure

Indexed keywords

CONCENTRATION (PROCESS); DOPING (ADDITIVES); GALLIUM; HALL EFFECT; HETEROJUNCTIONS; IRON COMPOUNDS; MOLECULAR BEAM EPITAXY; MULTILAYERS; OPTOELECTRONIC DEVICES; SEMICONDUCTING SILICON; SUBSTRATES; SUPERLATTICES;

GA-DOPED Β-FESI2; HALL MOBILITY; MIGRATION ENHANCED EPITAXY (MEE) GROWTH; NET HOLE CONCENTRATION; P-TYPE CONDUCTIVITY; SUPERLATTICE (PL) STRUCTURE;

THIN FILMS;

EID: 13444267713     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2004.08.039     Document Type: Conference Paper

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