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Volumn 163, Issue 1, 2002, Pages 248-252
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First principle calculation of the geometrical and electronic structure of impurity-doped β-FeSi2 semiconductors
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Author keywords
Conduction type; Doping; Electronic structure calculations; FeSi2
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Indexed keywords
CHROMIUM;
COBALT;
IRON DERIVATIVE;
MANGANESE;
NICKEL;
SILICON DERIVATIVE;
ARTICLE;
CALCULATION;
DENSITY;
ENERGY;
GEOMETRY;
SEMICONDUCTOR;
THEORY;
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EID: 0036328807
PISSN: 00224596
EISSN: None
Source Type: Journal
DOI: 10.1006/jssc.2001.9399 Document Type: Article |
Times cited : (23)
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References (23)
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