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Volumn 71, Issue 6, 1997, Pages 820-822

Carrier capture in pseudomorphically strained wurtzite GaN quantum-well lasers

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0242542730     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119657     Document Type: Article
Times cited : (12)

References (14)
  • 3
    • 0009429357 scopus 로고    scopus 로고
    • edited by K. Hess, J. P. Leburton, and U. Ravaili Plenum, New York
    • L. Rota, M. Grupen, and K. Hess, in Hot Carriers in Semiconductors, edited by K. Hess, J. P. Leburton, and U. Ravaili (Plenum, New York, 1996), p. 563.
    • (1996) Hot Carriers in Semiconductors , pp. 563
    • Rota, L.1    Grupen, M.2    Hess, K.3
  • 8
    • 0000307008 scopus 로고    scopus 로고
    • Y. M. Sirenko, J. B. Jeon, K. W. Kim, M. A. Littlejohn, and M. A. Stroscio, Phys. Rev. B 53, 1997 (1996); Appl. Phys. Lett. 69, 2504 (1996).
    • (1996) Appl. Phys. Lett. , vol.69 , pp. 2504
  • 12
    • 0003685207 scopus 로고
    • Electronic Materials Information Service Datareviews Series IEE, London
    • Properties of Group III Nitrides, edited by J. H. Edgar, Electronic Materials Information Service Datareviews Series (IEE, London, 1994).
    • (1994) Properties of Group III Nitrides
    • Edgar, J.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.