Very Low Threshold Current Density of 1.3-μm-Range GaInNAsSb-GaNAs 3 and 5 QWs Lasers

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 5, 2003, Pages 1209-1213

  Setiagung, Casimirus ^a   Shimizu, Hitoshi ^a   Ikenaga, Yoshihiko ^a   Kumada, Kouji ^a   Kasukawa, Akihiko ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

3 and 5 QWs lasers; GaInNAsSb novel material; GSMBE; MOCVD; Three steps growth; Very low threshold current density per well

Indexed keywords

CURRENT DENSITY; DEGRADATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; THERMAL CONDUCTIVITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

3 AND 5 QUANTUM WELLS (QWS) LASERS; GAINNASSB NOVEL MATERIALS; GSMBE; THREE-STEPS GROWTH; VERY LOW THRESHOLD CURRENT DENSITY PER WELL;

QUANTUM WELL LASERS;

EID: 1342303589     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.819499     Document Type: Conference Paper

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