Low threshold current 1.3μm InAsP QW ACIS lasers

Electronics Letters

Volumn 34, Issue 9, 1998, Pages 890-891

  Iwai, N ^a   Mukaihara, T ^a   Shimizu, H ^a   Yamanaka, N ^a   Kumada, K ^a   Kasukawa, A ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; MOLECULAR BEAM EPITAXY; OXIDATION; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SUPERLATTICES; SUBSTRATES;

QUANTUM WELL (QW) ALUMINUM OXIDE CONFINED INNER STRIPE (ACIS) LASERS;

QUANTUM WELL LASERS;

EID: 0032050476     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19980627     Document Type: Article

References (6)

1. HAYASHI, Y., MUKAIHARA, T., HATORI, N., OHNOKI, N., MATSUTANI, A., KOYAMA, F., and IGA, K.: 'Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure', Electron. Lett., 1995, 31, pp. 560-562
2. 1-xAs quantum well heterostructure laser', Appl. Phys. Lett., 1993, 63, pp. 1660-1662
3. CHENG, Y., DAPKUS, P.D., MACDOUGAL, M.H., and YANG, G.M.: 'Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide', IEEE Photonics. Technol. Lett., 1996, 8, pp. 176-178
4. OHNOKI, N., MUKAIHARA, T., HATORI, N., MIZUTANI, A., KOYAMA, F., and IGA, K.: 'Proposal and demonstration of AlAs-oxide confinement structure for InP-based long wavelength lasers', Jpn. J. Appl. Phys., 1997, 36, pp. 148-149
5. KASUKAWA, A., YOKOUCHI, N., YAMANAKA, N., and IWAI, N.: 'Very low threshold current density 1.3μm InAsP/InP/InGaP/InP/ GaInAsP strain-compensated multiple quantum well lasers', Electron. Lett., 1995, 31, pp. 1749-1750
6. xAs/AlInAs/Inp and application to 1.5μm multi-quantum-well lasers', J. Crystal Growth, 1995, 150, pp. 1328-1332