1.3-μm-Range GaInNAsSb-GaAs VCSELs

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 5, 2003, Pages 1214-1219

  Shimizu, Hitoshi ^a   Setiagung, Casimirus ^a   Ariga, Maiko ^a   Ikenaga, Yoshihiko ^a   Kumada, Kouji ^a   Hama, Takeshi ^a   Ueda, Natsumi ^a   Iwai, Norihiro ^a   Kasukawa, Akihiko ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

Communication systems; Doped mirror; Epitaxial growth; GaInNAs; GaInNAsSb; Quantum well lasers; Surfactant; VCSEL

Indexed keywords

COMMUNICATION SYSTEMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; REFLECTION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPONTANEOUS EMISSION; SURFACE ACTIVE AGENTS; THRESHOLD VOLTAGE;

DOPED MIRRORS; GAINNAS; GAINNASSB; VERTICAL-CAVITY SURFAC-EMITTING LASERS (VCSEL);

QUANTUM WELL LASERS;

EID: 1342303587     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.819505     Document Type: Conference Paper

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