Improvement in epitaxial quality of selectively grown Si 1-xGex layers with low pattern sensitivity for CMOS applications

Materials Science in Semiconductor Processing

Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 25-30

  Radamson, H H ^a   Hallstedt J ^a   Suvar, E ^a   Menon, C ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

CVD; Epitaxy; Loading effect; SiGe

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; EPITAXIAL GROWTH; GERMANIUM; INTERFACES (MATERIALS); MOSFET DEVICES; OXIDATION; POLYCRYSTALLINE MATERIALS; RELAXATION PROCESSES; SENSITIVITY ANALYSIS; THERMAL EFFECTS; THERMODYNAMIC STABILITY; X RAY DIFFRACTION;

HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD); LOADING EFFECT; SIGE; STATE-OF-THE-ART DEVICES;

SILICON COMPOUNDS;

EID: 13244276347     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.076     Document Type: Conference Paper

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