Band gap narrowing in strained Si1-xGex base on (0 0 1) Si substrate

Solid-State Electronics

Volumn 45, Issue 5, 2001, Pages 697-702

  Jin, Hai Yan ^a   Zhang, Li Chun ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL IMPURITIES; CRYSTAL ORIENTATION; ENERGY GAP; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

BAND GAP NARROWING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035335142     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00094-6     Document Type: Article

References (17)

1. T SiGe HBT technology
2. max
3. The standard thermodynamic functions for the formation of electrons and holes in Ge, Si, GaAs, and GaP
4. 1-x bulk alloys on (0 0 1) silicon substrates
5. 1-y substrates
6. Silicon based semiconductor heterostructures: Column IV band gap engineering
7. Measurements of band gap narrowing in Si bipolar transistors
8. 1-x/Si layer heterostructures
9. x layers
10. Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology