Strained Si-on-insulator fabricated from elastically-relaxed Si/SiGe structures

Materials Research Society Symposium Proceedings

Volumn 809, Issue , 2004, Pages 27-32

  Mooney, P M ^a   Cohen, G M ^a   Chen, H ^b   Chu, J O ^a   Klymko, N ^b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ETCHING; HYDROFLUORIC ACID; PHOTOLITHOGRAPHY; PHOTORESISTORS; POLYCRYSTALLINE MATERIALS; RAMAN SPECTROSCOPY; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

HYDROGEN BROMIDE; RAPID THERMAL CHEMICAL VAPOR DEPOSITION (RTCVD); STRAIN RELAXATION; THICK BURIED OXIDE (BOX);

SILICON ON INSULATOR TECHNOLOGY;

EID: 12744276081     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-809-b1.3     Document Type: Conference Paper

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