Quantum surface potential model suitable for advanced MOSFETs simulation

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 227-230

  Pregaldiny F ^a   Lallement, C ^a   Mathiot, D ^a  

^a ERM PHASE   (France)

Author keywords

Analytical models; Circuit simulation; CMOS technology; Context modeling; MOSFETs; Physics; Predictive models; Quantum mechanics; Semiconductor device modeling; Voltage

Indexed keywords

ANALYTICAL MODELS; CIRCUIT SIMULATION; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; MOSFET DEVICES; PHYSICS; QUANTUM THEORY; SEMICONDUCTOR DEVICES; SURFACE POTENTIAL;

CMOS TECHNOLOGY; CONTEXT MODELING; DEEP-SUBMICRON CMOS TECHNOLOGY; MOSFETS; NUMERICAL CALCULATION; PREDICTIVE MODELS; QUANTUM MECHANICAL EFFECTS; SURFACE POTENTIAL MODEL;

SEMICONDUCTOR DEVICE MODELS;

EID: 26744471940     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233678     Document Type: Conference Paper

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