Characterization of III-V semiconductor interfaces by Z-contrast imaging, EELS and CBED

Journal of Physics D: Applied Physics

Volumn 29, Issue 7, 1996, Pages 1767-1778

  Lakner, Hubert ^a   Bollig, Bernd ^a   Ungerechts, Stefan ^a   Kubalek, Erich ^a  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRON DIFFRACTION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MICROSCOPY; HETEROJUNCTIONS; IMAGING TECHNIQUES; MONOLAYERS; RELAXATION PROCESSES; SEMICONDUCTOR MATERIALS; STRAIN MEASUREMENT;

CONVERGENT BEAM ELECTRON DIFFRACTION; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SPATIAL RESOLUTION ORDERING; Z CONTRAST IMAGING;

INTERFACES (MATERIALS);

EID: 0030194242     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/29/7/012     Document Type: Article

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