The use of strain compensation layers in the growth of stacked quantum dot structures

Proceedings of the IEEE Conference on Nanotechnology

Volumn 2, Issue , 2003, Pages 848-851

  Lever, P ^a   Stewart, K ^a   Fu, L ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

Annealing; Capacitive sensors; Gallium arsenide; Infrared detectors; Luminescence; Photodetectors; Quantum dot lasers; Quantum dots; Temperature; US Department of Transportation

Indexed keywords

ANNEALING; CAPACITIVE SENSORS; GALLIUM ALLOYS; GALLIUM ARSENIDE; INFRARED DETECTORS; LUMINESCENCE; NANOCRYSTALS; NANOSENSORS; NANOTECHNOLOGY; PHOTODETECTORS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; TEMPERATURE;

DOT STRUCTURE; LARGE AMOUNTS; NUMBER OF LAYERS; PHOTOLUMINESCENCE INTENSITIES; QUANTUM DOT STRUCTURE; STRAIN COMPENSATION; THERMALLY STABLE; US DEPARTMENT OF TRANSPORTATION;

QUANTUM DOT LASERS;

EID: 84943598418     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2003.1231047     Document Type: Conference Paper

References (8)

1. D. Bimberg, M. Grundmann, F. Heinrichsdorff, N. Ledentsov, V. Ustinov, A. Zhukov, A. R. Kovsh, M. Maximov, Y. Shernyakov, B. Volovik, A. Tsatsul'nikov, P. Kop'ev, and Z. I. Alferov, "Quantum dot lasers: breakthrough in optoelectronics," Thin Solid Films, vol. 367, pp. 235-249, 2000.
2. A. Stiff-Roberts, S. Krishna, P. Bhattacharya, and S. Kennedy, "Low-bias, high-temperature performance of a normal-incidence inas/gaas vertical quantum-dot infrared photodetector with a current-blocking barrier." J. Vac. Sci. Tech. B, vol. 20, no. 3, pp. 1185-7, 2002.
3. A. Passaseo, G. Maruccio, M. D. Vittorio, S. D. Rinaldis, T. Todaro, R. Rinaldi, and R. Cingolani, "Dependence of the emission wavelength on the internal electric field in quantum-dot laser structures grown by metal-organic chemical-vapor deposition," Appl. Phys. Lett., vol. 79, no. 10, pp. 1435-1437, 2001.
4. R. L. Sellin, C. Ribbat, M. Grundmann, N. N. Ledentsov, and D. Bimberg, "Close-to-ideal device characteristics of high-power ingaas/gaas quantum dot lasers," Appl. Phys. Lett., vol. 78, no. 9, pp. 1207-9, 2001.
5. J. H. Marsh, D. Bhattacharyya, A. Saher Helmy, E. A. Avrutin, and A. C. Bryce, "Engineering quantum-dot lasers," Physica E, vol. 8, pp. 154-163, 2001.
6. G. Saint-Girons, A. Mereuta, G. Patriarche, J. M. Grard, and I. Sagnes, "Influence of the thermal treatment on the optical and structural properties of 1.3 m emitting lp-movpe grown inas/gaas quantum dots," Optical Materials, vol. 17, no. 1-2, pp. 263-266, 2001.
7. F. Heinrichsdorff, M. Grundmann, O. Stier, A. Krost, and D. Bimberg, "Influence of in/ga intermixing on the optical properties of ingaas/gaas quantum dots," J. Crystal Growth, vol. 195, p. 540, 1998.
8. R. Leon, Y. Kim, C. Jagadish, M. Gal, J. Zou, and D. J. H. Cockayne, "Effects of interdiffusion on the luminescence of ingaas/gaas quantum dots," Appl. Phys. Lett., vol. 69, no. 13, pp. 1888-1890, 1996.