Evidence for strong spatially localized band-filling effects at interface islands

Applied Physics Letters

Volumn 71, Issue 18, 1997, Pages 2581-2583

  Ding, Y J ^a   Reynolds, D C ^b   Lee, S J ^c   Khurgin, J B ^c   Rabinovich, W S ^d   Katzer, D S ^d  

^a BOWLING GREEN STATE UNIVERSITY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c Johns Hopkins University   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; OPTICALLY PUMPED LASERS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

LASER INTENSITY; LOCALIZED EXCITONS; PHOTOLUMINESCENCE PEAK;

PHOTOLUMINESCENCE;

EID: 0031551598     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119335     Document Type: Article

References (8)

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2. D. Bimberg, D. Mars, J. N. Miller, R. Bauer, O. Oertel, and J. Christen, Superlattices Microstruct. 3, 79 (1987).
3. M. Kohl, D. Heitmann, S. Tarucha, K. Leo, and K. Ploog, Phys. Rev. B 39, 7736 (1989).
4. D. Gammon, B. V. Shanabrook, and D. S. Katzer, Appl. Phys. Lett. 57, 2710 (1990).
5. A. G. Cui, Y. J. Ding, S. J. Lee, J. V. D. Veliadis, J. B. Khurgin, S. Li, D. C. Reynolds, and J. Grata, J. Opt. Soc. Am. B 13, 536 (1996).
6. Y. J. Ding, C. L. Guo, J. B. Khurgin, K.-K. Law, and J. L. Merz, Appl. Phys. Lett. 60, 2051 (1992).
7. The peak PL wavelength was used by us to confirm the aluminum concentration in the barriers.
8. We intentionally changed the aluminum concentration of the barriers to also study its effect on the tunneling of the carriers between two wells.