Chemical states and band offsets of NH3-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 1, 2004, Pages 176-180

  Oshima, M ^a   Toyoda, S ^a   Okabayashi, J ^a   Kumigashira, H ^a   Ono, K ^b   Niwa, M ^c   Usuda, K ^c   Hirashita, N ^c  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF MATERIALS STRUCTURE SCIENCE   (Japan)

^c Semiconductor Technology Academic Research Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; NITRIDING; PHOTOELECTRON SPECTROSCOPY; PROBABILITY DENSITY FUNCTION; SILICA; SURFACE CHEMISTRY; SYNCHROTRON RADIATION;

OXYNITRIDES; RAPID THERMAL NITRIDATION (RTN);

ULTRATHIN FILMS;

EID: 1242288153     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1635389     Document Type: Article

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