Accurate calibration of the retained fluence from a versatile single wafer implanter using RBS

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 217, Issue 1, 2004, Pages 177-182

  Boudreault, G ^a,c   Claudio, G ^a   Jeynes, C ^a   Low, R ^b,d   Sealy, B J ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b Applied Materials UK Ltd   (United Kingdom)

^c VU UNIVERSITY AMSTERDAM   (Netherlands)

^d VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; COMPUTER SOFTWARE; DOSIMETRY; INDUCTIVELY COUPLED PLASMA; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY EMISSION; STATISTICAL METHODS;

IMPLANTER FLUENCE MEASUREMENT;

SILICON WAFERS;

EID: 1242265460     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2003.09.033     Document Type: Article

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