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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volumn 194, Issue 1, 2002, Pages 15-25
Accurate determination of the stopping power of 4He in Si using Bayesian inference
(4)
Barradas, N P
a,b
Jeynes, C
c
Webb, R P
c
Wendler, E
d
a
INSTITUTO TECNOLÓGICO E NUCLEAR
(
Portugal
)
b
CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA
(
Portugal
)
c
UNIVERSITY OF SURREY
(
United Kingdom
)
d
FRIEDRICH SCHILLER UNIVERSITY JENA
(
Germany
)
Author keywords
Electronic stopping; MCMC; Reference materials; Silicon
Indexed keywords
ENERGY DISSIPATION; ION BEAMS; ION IMPLANTATION; IONS; MARKOV PROCESSES; MONTE CARLO METHODS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON;
STOPPING POWER;
HELIUM;
EID
:
0036644498
PISSN
:
0168583X
EISSN
:
None
Source Type
:
Journal
DOI
:
10.1016/S0168-583X(02)00494-9
Document Type
:
Article
Times cited : (
38
)
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