Accurate RBS measurement of ion implant doses in silicon+

Surface and Interface Analysis

Volumn 33, Issue 6, 2002, Pages 478-486

  Boudreault, G ^a,c   Jeynes, C ^a   Wendler, E ^a   Nejim, A ^a   Webb, R P ^b   Wtjen, U ^a  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^c JOINT RESEARCH CENTRE   (Italy)

Author keywords

Dosimetry; Ion implantation; Rutherford backscattering spectrometry; Silicon energy loss; Standards

Indexed keywords

AMORPHIZATION; DOSIMETRY; ENERGY DISSIPATION; ERRORS; INDUCTIVELY COUPLED PLASMA; MASS SPECTROMETRY; NEUTRON ACTIVATION ANALYSIS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON; SPECTRUM ANALYSIS; TRACE ANALYSIS;

CHANNELING EFFECTS; INDUCTIVELY COUPLED PLASMA ISOTOPE DILUTION MASS SPECTROMETRY; ION BEAM ANALYSIS;

ION IMPLANTATION;

EID: 0036610973     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1235     Document Type: Article

References (22)