A diodelike conduction model for the postbreakdown current in metal-oxide-semiconductor structures

Journal of Applied Physics

Volumn 96, Issue 11, 2004, Pages 6940-6942

  Miranda, E ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRON ENERGY LEVELS; SEMICONDUCTOR DEVICES; SILICA;

DIODE EQUATION; DIODELIKE CONDUCTION MODEL; POSTBREAKDOWN CURRENT; SERIES RESISTANCE;

MOS DEVICES;

EID: 12344312141     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1812584     Document Type: Article

References (24)

1. M. Nafría, J. Suñé, and X. Aymerich, J. Appl. Phys. 73, 205 (1993).
2. A. Halimaoui, O. Briere, and G. Ghihaudo, Microelectron. Eng. 36, 157 (1997).
3. K. Umeda and K. Taniguchi, J. Appl. Phys. 82, 297 (1997).
4. E. Wu and R. Vollertsen, IEEE Trans. Electron Devices 49, 2131 (2002).
5. B. Kaczer, R. Degraeve, A. De Keersgieter, K. Van de Mieroop, V. Simons, and G. Groeseneken, IEEE Trans. Electron Devices 49, 507 (2002).
6. J. Suñé, D. Jiménez, and E. Miranda, in Oxide Reliability, A summary of silicon oxide wearout, breakdown and reliability, Selected Topics in Electronics and Systems Vol. 23, edited by D. Dumin (World Scientific, Singapore, 2001), p. 173.
7. D. Ting, Appl. Phys. Lett. 74, 585 (1999).
8. Y. Omura and K. Komiya, J. Appl. Phys. 91, 4298 (2002).
9. T. Bearda, P. Woerlee, H. Wallinga, and M. Heyns, Jpn. J. Appl. Phys., Part 1 41, 2431 (2002).
10. E. Miranda and J. Suñé, in Proceedings of the Institute of Electrical and Electronic Engineers, International Reliability Physics Symposium, USA, 2001, p. 367.
11. A. Ortiz-Conde, F. García Sanchez, and J. Muci, Solid-State Electron. 44, 1861 (2000).
12. J. Marchand and V. K. Truong, J. Appl. Phys. 54, 7034 (1983).
13. R. Hasunuma, T. Komeda, and H. Tokumoto, Appl. Surf. Sci. 130, 84 (1998).
14. P. Sarmah and A. Rahman, Bull. Mater. Sci. 24, 411 (2001).
15. C. Maurel, R. Coratger, F. Ajustron, J. Beauvillain, and P. Gerard, J. Appl. Phys. 94, 1979 (2003).
16. W. Kang, J. Davidson, Y. Gurbuz, and D. Kerns, J. Appl. Phys. 78, 1101 (1995).
17. K. Molnár, T. Mohácsy, A. H. Abdulhadi, J. Volk, and I. Bársony, Phys. Status Solidi A 197, 446 (2003).
18. J. Shah, Y. Li, Th. Gessmann, and E. Schubert, J. Appl. Phys. 94, 2627 (2003).
19. V. Aubry and F. Meyer, J. Appl. Phys. 76, 7973 (1994).
20. B. Patel, K. Nanda, and S. Sahu, J. Appl. Phys. 85, 3666 (1999).
21. H. Maruska, A. Ghosh, D. Eustace, and T. Feng, J. Appl. Phys. 54, 2489 (1983).
22. H. Henish, in Semiconductor contacts (Clarendon, Oxford, 1984), p. 23.
23. T. Hosoi, P. Lo Re, Y. Kamakura, and K. Taniguchi, in Proceedings of the Institute of Electrical and Electronic Engineers, International Electron Devices Meeting, USA, 2002, p. 121.
24. A. Avellán, Ph.D. thesis, Technische Universittat Hamburg-Harburg, 2003.