On the nature of metal-porous Si-single crystal silicon (MPS) diodes

Physica Status Solidi (A) Applied Research

Volumn 197, Issue 2, 2003, Pages 446-451

  Molnar K ^a   Mohacsy T ^a   Abdulhadi, A H ^a   Volk, J ^a   Barsony I ^a  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTRON TUNNELING; PHASE TRANSITIONS; POROSITY; POROUS SILICON; SEMICONDUCTING SILICON; SINGLE CRYSTALS; THERMAL EFFECTS;

FOWLER-NORDHEIM TUNNELING; MESOPOROUS STRUCTURE; METAL-POROUS SILICON-SINGLE CRYSTAL SILICON DIODE; OHMIC CONDUCTANCE;

SEMICONDUCTOR DIODES;

EID: 0037933415     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306542     Document Type: Article

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