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Applied Physics A: Materials Science and Processing

Volumn 80, Issue 4, 2005, Pages 777-781

Effects of rf bias voltage and H2 flow rate on the growth of cubic boron nitride films by chemical vapor deposition

(3) Yu, J a Matsumoto, S a Okada, K a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPRESSIVE STRESS; CRYSTAL GROWTH; ELECTRIC POTENTIAL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HARDNESS; HYDROGEN; ION BOMBARDMENT; PHYSICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY; FILM THICKNESS; FLOW RATES; GLANCING ANGLE X-RAY DIFFRACTION (GAXRD);

CUBIC BORON NITRIDE;

EID: 12344295261 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2744-5 Document Type: Article

Times cited : (3)

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