SIMS backside depth profiling of ultra shallow implants

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 335-338

  Yeo, K L ^a   Wee, A T S ^a   See, A ^b   Liu, R ^a   Ng, C M ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Backside SIMS; Oxygen flooding; Sample rotation; Secondary ion mass spectrometry; Ultra shallow implants

Indexed keywords

DOPING (ADDITIVES); ETCHING; IONS; SECONDARY ION MASS SPECTROMETRY; SPUTTERING; SUBSTRATES;

DEPTH PROFILING;

ION IMPLANTATION;

EID: 12244270336     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00671-2     Document Type: Conference Paper

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