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Volumn 18, Issue 1, 2000, Pages 519-523
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Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTALLINE MATERIALS;
SECONDARY ION MASS SPECTROMETRY;
CRYSTALLINE SILICON;
ULTRALOW ENERGY IMPLANTS;
SILICON WAFERS;
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EID: 0033700333
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.591224 Document Type: Article |
Times cited : (10)
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References (14)
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