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Volumn 18, Issue 1, 2000, Pages 519-523

Depth profiling of ultrashallow B implants in silicon using a magnetic-sector secondary ion mass spectrometry instrument

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY;

EID: 0033700333     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.591224     Document Type: Article
Times cited : (10)

References (14)
  • 12
    • 0343700727 scopus 로고    scopus 로고
    • note
    • 2 beam, using the procedure described in Napolitani et al. (unpublished).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.