The effect of carbon and germanium on phase transformation of nickel on Si1-x-yGexCy epitaxial layers

Journal of Applied Physics

Volumn 95, Issue 5, 2004, Pages 2397-2402

  Hallstedt J ^a   Blomqvist, M ^a   Persson, P O A ^b   Hultman, L ^b   Radamson, H H ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; CARBON; CRYSTAL ORIENTATION; CRYSTALLOGRAPHY; DIFFUSION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON MICROSCOPES; EPITAXIAL GROWTH; GERMANIUM; INTERFACIAL ENERGY; NICKEL; PHASE TRANSITIONS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

SHEET RESISTANCE; STRAIN RELAXATION;

SILICON ALLOYS;

EID: 12144288898     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1645996     Document Type: Article

References (19)

1. J. P. Gambino and E. O. Colgan, Mater. Chem. Phys. 52, 99 (1998).
2. H. Iwai, T. Ohguto, and S.-I. Ohmi, Microelectron. Eng. 60, 157 (2002).
3. A. Julies, D. Knoesen, R. Pretorius, and D. Adams, Thin Solid Films 347, 201 (1999).
4. J. E. E. Baglin, H. A. Atwater, D. Gupta, and F. M. d'Heurle, Thin Solid Films 93, 225 (1982).
5. S. Gannavaram, N. Pesovic, and M. C. Öztürk, Tech. Dig. - Int. Electron Devices Meet., 437 (2000).
6. C. Menon, A.-C. Lindgren, P. O. Å. Persson, L. Hultman, and H. H. Radamson, J. Electrochem. Soc. 150, G253 (2003).
7. J.-S. Luo, W.-T. Lin, C. Y. Chang, P. S. Shin, and F. M. Pan, J. Vac. Sci. Technol. A 18(1), 143 (2000).
8. H. J. Osten, M. Kim, G. Lippert, and P. Zaumseil, Thin Solid Films 93, 294 (1997).
9. P. F. Fewster and N. L. Andrew, J. Appl. Phys. 74, 3121 (1993).
10. G. V. Hansson, H. H. Radamson, and W.-X. Ni, J. Mater. Sci. 6, 292 (1995).
11. F. d'Heurle, C. S. Peterson, J. E. E. Baglin, S. J. La Placa, and C. Y. Wong, J. Appl. Phys. 55, 4208 (1984).
12. Cohesion in Metals: Transition Metal Alloys, edited by F. R. Deboer, R. Boom, W. C. Mattens, A. R. Miedema, and A. K. Niessen (North-Holland, Amsterdam, 1988).
13. J. Seger, S.-L. Zhang, D. Mangelinck, and H. H. Radamson, Appl. Phys. Lett. 81, 1978 (2002).
14. A. Eyal, R. Brener, R. Beserman, M. Eizenberg, Z. Atzmon, D. J. Smith, and J. W. Mayer, Appl. Phys. Lett. 69, 64 (1996).
15. R. A. Donaton, K. Maex, A. Vantomme, G. Lanouche, Y. Morciaux, A. St. Amour, and J. C. Strum, Appl. Phys. Lett. 70, 1266 (1997).
16. H. Rücker, B. Heinemann, D. Bolze, D. Knoll, D. Krüger, R. Kurps, H. J. Osten, P. Schley, B. Tillack, and P. Zaumseil, Tech. Dig. - Int. Electron Devices Meet. 1999, 345.
17. C. W. Liu, Y. D. Tseng, and Y. S. Huang, Appl. Phys. Lett. 75, 2271 (1999).
18. O. Nakatsuka, Y. Tsuchiya, A. Sakai, S. Zaima, J. Murota, and Y. Yasuda, IEEE Extended Abstracts of the Third International Workshop on Junction Technology (IWJT) (Tokyo, Japan, 2002) p. 71.
19. K. L. Pey, W. K. Choi, S. Chattopadhyay, H. B. Zhao, E. A. Fitzgerald, D. A. Antoniadis, and P. S. Lee, J. Vac. Sci. Technol. A 20, 1903 (2002).