SCOPUS 정보 검색 플랫폼

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

Activation of beryllium-implanted GaN by two-step annealing

(4) Sun, Yuejun a Tan, Leng Seow a Chua, Soo Jin a Prakash, Savarimuthu a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BERYLLIUM; CARRIER CONCENTRATION; CHEMICAL ACTIVATION; DIFFUSION; DOPING (ADDITIVES); HALL EFFECT; HOLE MOBILITY; ION IMPLANTATION; IONIZATION;

ELECTRICAL ACTIVATION; ELECTRONEGATIVITY; HOLE CONCENTRATIONS; IONIZATION ENERGY;

GALLIUM NITRIDE;

EID: 3242763814 PISSN: 10925783 EISSN: None Source Type: Journal
DOI: 10.1557/s1092578300004440 Document Type: Conference Paper

Times cited : (2)

References (20)

1
- 0000815007
- S. Strite and H. Morkoc, J. Vac. Sci. Tech. B, 10, 1237 (1992)
- (1992) J. Vac. Sci. Tech. B , vol.10 , pp. 1237
- Strite, S.¹ Morkoc, H.²

2
- 0025791827
- I. Akasaki, H. Amano, M. Kito and K. Hiramatsu, J. Lumin., 48/49, 666 (1991)
- (1991) J. Lumin. , vol.48-49 , pp. 666
- Akasaki, I.¹ Amano, H.² Kito, M.³ Hiramatsu, K.⁴

3
- 0029220216
- J. W. Orton, Semicond. Sci. Tech., 10, 101 (1995)
- (1995) Semicond. Sci. Tech. , vol.10 , pp. 101
- Orton, J.W.¹

4
- 0028440604
- S. Strite, Jpn. J. Appl. Phys., 33, 699 (1994)
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 699
- Strite, S.¹

5
- 0000596029
- F. Bernardini, V. Fiorentini, and A. Bosin, Appl. Phys. Lett., 70, 2990 (1997)
- (1997) Appl. Phys. Lett. , vol.70 , pp. 2990
- Bernardini, F.¹ Fiorentini, V.² Bosin, A.³

6
- 0000146728
- D. J. Dewsnip, A. V. Andrianov, I. Harrison, J. W. Orton, D.E. Lacklison, G. B. Ren, S.E. Hopper, T. S. Cheng, and C. T. Foxon, Semicond. Sci. Tech., 13, 500 (1998)
- (1998) Semicond. Sci. Tech. , vol.13 , pp. 500
- Dewsnip, D.J.¹ Andrianov, A.V.² Harrison, I.³ Orton, J.W.⁴ Lacklison, D.E.⁵ Ren, G.B.⁶ Hopper, S.E.⁷ Cheng, T.S.⁸ Foxon, C.T.⁹

7
- 3242744074
- Article 19
- F. J. Sanchez, F. Calle, M. A. Sanchez-Garcia, E. Calleja, E. Munoz, C. H. Molly, D. J. Somerford, F. K. Koschnick, K. Michael, and J. M. Spaeth, MRS Internet J. of Nitride Semicon. Research, V3, Article 19 (1998)
- (1998) MRS Internet J. of Nitride Semicon. Research , vol.3
- Sanchez, F.J.¹ Calle, F.² Sanchez-Garcia, M.A.³ Calleja, E.⁴ Munoz, E.⁵ Molly, C.H.⁶ Somerford, D.J.⁷ Koschnick, F.K.⁸ Michael, K.⁹ Spaeth, J.M.¹⁰

8
- 0032555866
- C. Ronning, E. P. Carlson, D. B. Thomson, and R. F. Davis, Appl. Phys. Lett., 73, 1622 (1998)
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1622
- Ronning, C.¹ Carlson, E.P.² Thomson, D.B.³ Davis, R.F.⁴

9
- 0001364155
- A. Salvador, W. Kim, O. Aktas, A.Botchkarev, Z. Fan, and H. Morkoc, Appl. Phys. Lett., 69, 2692 (1996)
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2692
- Salvador, A.¹ Kim, W.² Aktas, O.³ Botchkarev, A.⁴ Fan, Z.⁵ Morkoc, H.⁶

10
- 0043151060
- J. Neugebauer and C. G. Van De Walle, Appl. Phys. Lett., 85, 3003 (1999)
- (1999) Appl. Phys. Lett. , vol.85 , pp. 3003
- Neugebauer, J.¹ Van De Walle, C.G.²

11
- 0030260130
- O. Brandt, H. Yang, H. Kostial, and K. H. Ploog, Appl. Phys. Lett., 69, 2707 (1996)
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2707
- Brandt, O.¹ Yang, H.² Kostial, H.³ Ploog, K.H.⁴

12
- 0038436228
- W. Gotz, N. M. Johnson, C. Chen, H. Liu, C. Kuo and W. Imler, Appl. Phys. Lett., 68, 3144 (1996)
- (1996) Appl. Phys. Lett. , vol.68 , pp. 3144
- Gotz, W.¹ Johnson, N.M.² Chen, C.³ Liu, H.⁴ Kuo, C.⁵ Imler, W.⁶

13
- 0000853374
- J.C. Zolper, R. G. Wilson, S. J. Pearton and R. A. Stall, Appl. Phys. Lett., 68, 1945(1996).
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1945
- Zolper, J.C.¹ Wilson, R.G.² Pearton, S.J.³ Stall, R.A.⁴

14
- 0001561943
- L. Eckey, U. von Gfug, J. Holst, A. Hoffmann, A. Kaschner, H. siegle, C. Thomsen, B. Schineller, K. Heime, M. Heuken, O. Schon and R. Beccard, J. Appl. Phys., 84, 5828 (1998)
- (1998) J. Appl. Phys. , vol.84 , pp. 5828
- Eckey, L.¹ Von Gfug, U.² Holst, J.³ Hoffmann, A.⁴ Kaschner, A.⁵ Siegle, H.⁶ Thomsen, C.⁷ Schineller, B.⁸ Heime, K.⁹ Heuken, M.¹⁰ Schon, O.¹¹ Beccard, R.¹²

15
- 3242746346
- Ed. S. J. Pearton Gordon and Breach, New York, ch. 12
- J. C. Zolper, in : GaN and Related Materials, Ed. S. J. Pearton (Gordon and Breach, New York, 1997) ch. 12
- (1997) GaN and Related Materials
- Zolper, J.C.¹

16
- 0005306582
- R. G. Wilson, J. M. Zavada, X.A. Cao, R.K. Singh, S. J. Pearton, H. J. Guo, S. J. Pennycook, M. Fu, J.A. Sekhar, V. Scarvepalli, R. J. Shul, J. Han, D. J. Rieger, J. C. Zolper and C. R. Abernathy, J. Vac. Sci. Technol., A 17, 1226 (1999).
- (1999) J. Vac. Sci. Technol. , vol.17 A , pp. 1226
- Wilson, R.G.¹ Zavada, J.M.² Cao, X.A.³ Singh, R.K.⁴ Pearton, S.J.⁵ Guo, H.J.⁶ Pennycook, S.J.⁷ Fu, M.⁸ Sekhar, J.A.⁹ Scarvepalli, V.¹⁰ Shul, R.J.¹¹ Han, J.¹² Rieger, D.J.¹³ Zolper, J.C.¹⁴ Abernathy, C.R.¹⁵

17
- 24544440545
- C. Ronning, K. J. Linthicum, E. P. Carlson, P. J. Hartlieb, D. B. Thomson, T. Gehrke and R. F. Davis, MRS Internet J. Nitride Semicond. Res., 4S1, G3.17 (1999)
- (1999) MRS Internet J. Nitride Semicond. Res. , vol.4 S1
- Ronning, C.¹ Linthicum, K.J.² Carlson, E.P.³ Hartlieb, P.J.⁴ Thomson, D.B.⁵ Gehrke, T.⁶ Davis, R.F.⁷

18
- 0000950032
- S. J. Pearton, R. G. Wilson, J. M. Zavada, J. Han and R. J. Shul, Appl. Phys. Lett., 73, 1877 (1998)
- (1998) Appl. Phys. Lett. , vol.73 , pp. 1877
- Pearton, S.J.¹ Wilson, R.G.² Zavada, J.M.³ Han, J.⁴ Shul, R.J.⁵

19
- 0001054680
- T. Suski, J. Jun, M. Leszczynski, H. Teisseyre, S. Strite, A. Rockett, A. Pelzmann, M. Kamp and K. J. Ebeling, J. Appl. Phys., 84, 1155 (1998)
- (1998) J. Appl. Phys. , vol.84 , pp. 1155
- Suski, T.¹ Jun, J.² Leszczynski, M.³ Teisseyre, H.⁴ Strite, S.⁵ Rockett, A.⁶ Pelzmann, A.⁷ Kamp, M.⁸ Ebeling, K.J.⁹

20
- 0001024075
- F. A. Reboredo and S. T. Pantelides, Phys. Rev. Lett., 82, 1887 (1999)
- (1999) Phys. Rev. Lett. , vol.82 , pp. 1887
- Reboredo, F.A.¹ Pantelides, S.T.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.