Influence of rapid thermal annealing on the optical properties of gallium nitride grown by gas-source molecular-beam epitaxy

Applied Physics Letters

Volumn 72, Issue 8, 1998, Pages 936-938

  Li, X B ^a   Sun, D Z ^a   Zhang, J P ^a   Kong, M Y ^a   Yoon, S F ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; HYDROGEN BONDS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; RAMAN SCATTERING; SEMICONDUCTOR GROWTH; STRESS RELAXATION; THERMAL EXPANSION;

GALLIUM NITRIDE; GAS SOURCE MOLECULAR BEAM EPITAXY; NUCLEAR REACTION ANALYSIS; RAMAN SHIFT; THERMAL EXPANSION MISFIT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032001076     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120878     Document Type: Article

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