Substrate bias effects in AlGaN/GaN doped channel heterostructure field effect transistors grown on doped SiC substrates

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 1445-1448

  Gaska, R ^a   Shur, M S ^b   Yang, J W ^a   Osinsky, A ^a   Orlov, A O ^c   Snider, G L ^c  

^a APA Optronics   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c University of Notre Dame   (United States)

Author keywords

Field Effect Transistors; Heterostructures; Wide Band Gap Semiconductors

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; HETEROJUNCTIONS; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILICON CARBIDE;

BACKGATING EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 11644257513     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.1445     Document Type: Article

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