Recent progress in AlGaN/GaN based optoelectronic devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3006, Issue , 1997, Pages 154-163

  Khan, Mohamed A ^a   Shur, Michael S ^b  

^a APA Optronics   (United States)

^b University of Virginia   (United States)

Author keywords

AIN; GaN; InGaN; Laser; Light emitting diode; Photoluminescence; Spinel; Wide band gap

Indexed keywords

CORUNDUM; DIODES; ELECTRONIC PROPERTIES; ELECTROOPTICAL DEVICES; ENERGY GAP; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; LASERS; LATTICE MISMATCH; LIGHT EMISSION; LIGHT EMITTING DIODES; LIGHT SOURCES; LUMINESCENCE; OPTOELECTRONIC DEVICES; ORGANIC LIGHT EMITTING DIODES (OLED); PHOTOLUMINESCENCE; PHYSICAL OPTICS; SAPPHIRE; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; SOLID SOLUTIONS; SUBSTRATES; TRANSISTORS; WATER ANALYSIS;

AIN; GAN; INGAN; LASER; LIGHT EMITTING DIODE; SPINEL; WIDE BAND GAP;

GALLIUM ALLOYS;

EID: 11644305284     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.264214     Document Type: Conference Paper

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