Photoluminescence and photoreflectance study of InGaAs/AlAsSb quantum wells grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1050-1055

  Mozume, T ^a   Kasai, J ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRON TRANSITIONS; ENERGY GAP; EXCITONS; HIGH TEMPERATURE OPERATIONS; INTERFACES (MATERIALS); LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

INTERBAND TRANSITION ENERGY; PHOTOREFLECTANCE; STOKES SHIFT; TEMPERATURE DEPENDENCE;

PHOTOLUMINESCENCE;

EID: 1142304519     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1637936     Document Type: Article

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