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Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 247-251

Effect of group-V species exchange at the interfaces of InGaAs/AlAsSb superlattice

(2) Georgiev, Nikolai a Mozume, Teruo a

a WASEDA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; X RAY CRYSTALLOGRAPHY;

SHORT-PERIOD SUPERLATTICE STRUCTURE;

SEMICONDUCTOR SUPERLATTICES;

EID: 0034140506 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00549-7 Document Type: Article

Times cited : (15)

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