Photoluminescence and photoreflectance characterization of InGaAs/AlAsSb quantum wells grown by molecular beam epitaxy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 361-365

  Mozume, T ^a   Georgiev, N ^a,b  

^a WASEDA UNIVERSITY   (Japan)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

InGaAs AlAsSb; Photoluminescence; Photoreflectance; Quantum wells

Indexed keywords

CHARACTERIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

PHOTOREFLECTANCE; TRANSITION ENERGIES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0036492681     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00558-6     Document Type: Article

References (11)