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Volumn 71, Issue 25, 1997, Pages 3676-3678

Mechanism for thermal quenching of luminescence in SiGe/Si structures grown by molecular beam epitaxy: Role of nonradiative defects

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Indexed keywords


EID: 0011136672     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120478     Document Type: Article
Times cited : (28)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.