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Volumn 83, Issue 9, 1998, Pages 4678-4682

Space charge effects on dopant diffusion coefficient measurements in semiconductors

Author keywords

[No Author keywords available]

Indexed keywords

COPPER COMPOUNDS; DIFFUSION IN SOLIDS; ELECTRIC CURRENTS; ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; MATHEMATICAL MODELS; OHMIC CONTACTS; SEMICONDUCTOR JUNCTIONS;

EID: 0032070895     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367254     Document Type: Article
Times cited : (29)

References (29)
  • 12
    • 85034305628 scopus 로고    scopus 로고
    • note
    • 6 V/cm. Leaving aside the problem of the preparation of such a junction, the Debye lengths will approach interatomic distances. Then the strength and range of the electric field become comparable with those of the crystal field and the interface becomes similar to that between two different metallic phases, i.e., a situation that is very different from the one we are concerned with here.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.