Capacitance and conductance of semiconductor heterojunctions with continuous energy distribution of interface states

Journal of Applied Physics

Volumn 80, Issue 12, 1996, Pages 6839-6848

  Sakhaf, M ^a,b   Schmeits, M ^a  

^a UNIVERSITY OF LIÈGE   (Belgium)

^b HASSAN II UNIVERSITY   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRIC PROPERTIES; ELECTRONIC DENSITY OF STATES; ELECTRONS; ENERGY GAP; FERMI LEVEL; HIGH ENERGY PHYSICS; INTERFACES (MATERIALS);

CAPACITANCE FREQUENCY CURVES; CAPACITANCE VOLTAGE CURVES; CONDUCTANCE; CONTINUOUS DENSITY OF STATES DISTRIBUTION; CONTINUOUS ENERGY DISTRIBUTION; ELECTRICAL CONDUCTION; POISSON EQUATION;

HETEROJUNCTIONS;

EID: 0030401752     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363750     Document Type: Article

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