Implantation and post-annealing characteristics when impinging small B n clusters into silicon at low fluence

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 228, Issue 1-4 SPEC. ISS., 2005, Pages 250-255

  Liang, J H ^a   Han, H M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Annealing; Cluster ion implantation; Junction depth; Sheet resistance; Transient enhanced diffusion

Indexed keywords

CLUSTER ION IMPLANTATION; JUNCTION DEPTH; SHEET RESISTANCE; TRANSIENT-ENHANCED DIFFUSION;

COMPUTER SIMULATION; DIFFUSION; ION BEAMS; KINETIC ENERGY; MONOMERS; PROBLEM SOLVING; SILICON; THERMAL EFFECTS;

ANNEALING;

EID: 11344292790     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.10.053     Document Type: Conference Paper

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