Depth profiles of cluster-ion-implanted BSi in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 767-771

  Liang, Jenq Horng ^a   Chiang, Shiaw Lung ^a   Chen, Chin Tsai ^b   Niu, Huan ^a   Tseng, Mao Sheng ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Channeling; Cluster ion implantation; Radiation enhanced diffusion; Rapid thermal annealing; Shallow junction

Indexed keywords

BORON COMPOUNDS; DIFFUSION IN SOLIDS; MONOMERS; RADIATION EFFECTS; RAPID THERMAL ANNEALING; SILICON WAFERS;

RADIATION ENHANCED DIFFUSION (RED);

ION IMPLANTATION;

EID: 0036569382     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01175-2     Document Type: Conference Paper

References (22)