Higher moments of the implanted-ion profiles of bismuth in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 153, Issue 1-4, 1999, Pages 436-441

  Liang, J H ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; LEAST SQUARES APPROXIMATIONS; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS;

CRITICAL ENERGY; ION ENERGY; KURTOSIS; PEARSON DISTRIBUTION; PROJECTED RANGE; RANGE STRAGGLING; SKEWNESS;

ION IMPLANTATION;

EID: 0033516052     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(99)00061-0     Document Type: Article

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