Range parameters of Bn cluster ion implantation in silicon

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 219-220, Issue 1-4, 2004, Pages 783-787

  Liang, J H ^a   Han, H M ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Cluster ion implantation; Radiation enhanced diffusion; Rapid thermal annealing; Shallow junction; Sheet resistance

Indexed keywords

BORON; DIFFUSION; ELECTRIC CONDUCTIVITY; PARAMETER ESTIMATION; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON;

CLUSTER ION IMPLANTATION; RADIATION-ENHANCED DIFFUSION; SHALLOW JUNCTIONS; SHEET RESISTANCE;

ION IMPLANTATION;

EID: 2342644080     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2004.01.163     Document Type: Conference Paper

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